Figuring of optical aluminium devices by reactive ion beam etching

Etching of graphene devices with a helium ion beam.

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) su...

Reactive Ion Beam Etching of Large Diffraction Gratings

Large area Multilayer Dielectric (MLD) diffraction gratings are essential components for temporal pulse compression in high energy laser systems. MLD grating designs typically consist of a silica grating layer on top of a dielectric multilayer reflector. A reactive ion beam etching (RIBE) process using a gridded radio frequency (RF) ion source was developed to uniformly etch the silica grating ...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

Reactive ion etching of GaN using WI3

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...